vs-60eps..pbf www.vishay.com vishay semiconductors revision: 18-aug-11 1 document number: 94345 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 high voltage input rectifier diode, 60 a features ? designed and qualified according to jedec-jesd47 ? compliant to rohs directive 2002/95/ec applications ? typical applications are in input rectification and these products are designed to be used with vishay hpp switches and output rectifie rs which are available in identical package outlines. description the vs-60eps..pbf rectifier hi gh voltage series has been optimized for very low forwar d voltage drop, with moderate leakage. the glass passivation technology used has reliable operation up to 150 c junction temperature. product summary package to-247ac modified i f(av) 60 a v r 800 v to 1200 v v f at i f 1.09 v i fsm 950 a t j max. 150 c diode variation single die base common cathode 2 13 anode 2 cathode 1 to-247ac mo d i?e d major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 60 a v rrm 800/1200 v i fsm 950 a v f 60 a, t j = 25 c 1.09 v t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma vs-60EPS08PBF 800 900 1 vs-60eps12pbf 1200 1300 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 118 c, 180 conduction half sine wave 60 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 950 10 ms sine pulse, no voltage reapplied 1100 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 4512 a 2 s 10 ms sine pulse, no voltage reapplied 6300 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 63 000 a 2 ? s
vs-60eps..pbf www.vishay.com vishay semiconductors revision: 18-aug-11 2 document number: 94345 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 30 a, t j = 25 c 1.0 v 60 a, t j = 25 c 1.09 v forward slope resistance r t t j = 150 c 3.96 m ? threshold voltage v f(to) 0.74 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 1.0 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, unction to case r thjc dc operation 0.35 c/w maximum thermal resistance, junction to ambient r thja 40 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.2 approximate weight 6g 0.21 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-247ac modified (jedec) 60eps08 60eps12
vs-60eps..pbf www.vishay.com vishay semiconductors revision: 18-aug-11 3 document number: 94345 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non- repetitive surge current fig. 6 - maximum non- repetitive surge current maximum allowable case temperature (c) average forward current (a) 70 60 50 40 30 20 10 150 140 130 120 110 100 0 30 60 90 ? cond u ction angle 60eps.. series r thjc (dc) = 0.35 k/ w 120 1 8 0 94345_01 maximum allowable case temperature (c) average forward current (a) 20 8 0 100 40 60 0 30 60 1 8 0 dc 120 cond u ction period ? 60eps.. series r thjc (dc) = 0.35 k/ w 90 150 140 130 120 110 94345_02 maximum average forward power loss (w) average forward current (a) 10 20 60 70 30 40 50 0 ? cond u ction angle 1 8 0 120 90 60 30 rms limit 60eps.. series t j = 150 c 90 70 50 30 10 8 0 60 40 20 0 94345_03 maximum average forward power loss (w) average forward current (a) 20 8 0100 40 60 0 dc 1 8 0 120 90 60 30 rms limit 60eps.. series t j = 150 c cond u ction period ? 110 90 50 60 70 30 10 100 8 0 40 20 0 94345_04 at any rated load condition and w ith rated v rrm applied follo w ing s u rge. initial t j = 150 c at 60 hz 0.00 8 3 s at 50 hz 0.0100 s 60eps.. series peak half sine wave forward current (a) number of equal amplitude half cycle current pulse (n) 10 100 1 300 400 600 8 00 500 700 900 1000 94345_05 peak half sine wave forward current (a) pulse train duration (s) 1.0 0.1 0.01 200 400 600 8 00 1000 1200 maxim u m non-repetiti v e s u rge c u rrent v ers u s p u lse train d u ration. initial t j = 150 c no v oltage reapplied rated v rrm reapplied 60eps.. series 94345_06
vs-60eps..pbf www.vishay.com vishay semiconductors revision: 18-aug-11 4 document number: 94345 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - forward voltage drop characteristics fig. 8 - thermal impedance z thjc characteristics instantaneous forward current (a) instantaneous forward voltage (v) 0 1.0 2.0 3.0 4.0 0.5 1.5 2.5 3.5 4.5 1 10 1000 100 94345_07 60eps.. series t j = 150 c t j = 25 c 0.01 0.1 1 0.0001 0.001 0.01 0.1 10 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) 94345_0 8 60eps.. series single p u lse steady state v al u e (dc operation) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.0 8
vs-60eps..pbf www.vishay.com vishay semiconductors revision: 18-aug-11 5 document number: 94345 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table 2 - current rating (60 = 60 a) 3 - circuit configuration: 4 - package: 5 - type of silicon: 6 - voltage code x 100 = v rrm 7 - pbf = lead (pb)-free e = single diode p = to-247ac modified s = standard recovery rectifier 08 = 800 v 12 = 1200 v device code 6 2 4 3 5 7 60 e p s 12 pbf vs- 1 1 - vishay semiconductors product links to related documents dimensions www.vishay.com/doc?95253 part marking information www.vishay.com/doc?95255
outline dimensions www.vishay.com vishay semiconductors revision: 21-jun-11 1 document number: 95253 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters and inches notes (1) dimensioning and tolera nce per asme y14.5m-1994 (2) contour of slot optional (3) dimension d and e do not include mold flas h. mold flash shall not exceed 0.127 mm (0 .005") per side. these dimensions are measu red at the outermost extremes of the plastic body (4) thermal pad contour optional with dimensions d1 and e1 (5) lead finish uncontrolled in l1 (6) ? p to have a maximum draft an gle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) outline conforms to jede c outline to-247 with ex ception of dimension c symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.65 5.31 0.183 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 3 a2 1.50 2.49 0.059 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 2.54 0.010 b2 1.65 2.39 0.065 0.094 l 14.20 16.10 0.559 0.634 b3 1.65 2.37 0.065 0.094 l1 3.71 4.29 0.146 0.169 b4 2.59 3.43 0.102 0.135 n 7.62 bsc 0.3 b5 2.59 3.38 0.102 0.133 ? p 3.56 3.66 0.14 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 6.98 - 0.275 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.70 0.776 0.815 3 r 4.52 5.49 1.78 0.216 d1 13.08 - 0.515 - 4 s 5.51 bsc 0.217 bsc e n (2) (3) (4) (4) (2) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c (5) l1 1 2 3 q d a a2 a a a1 c a (6) p (datum b) p1 d1 (4) 4 e1 view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting lead assignments diodes 1. - anode/open 2. - cathode 3. - anode 0.10 a c m m ? k b d m m
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